| PART |
Description |
Maker |
| MSG33001 |
SiGe HBT type For low-noise RF amplifier
|
Panasonic Semiconductor
|
| HMC548LP309 |
SiGe HBT MMIC LOW NOISE AMPLIFIER, 1.2 - 3.0 GHz
|
Hittite Microwave Corporation
|
| BGB717L7ESD |
SiGe:C Low Noise Amplifier MMIC for FM Radio Applications
|
Infineon Technologies AG
|
| MAX2645 |
3.4GHz to 3.8GHz SiGe Low-Noise Amplifier/ PA Predriver
From old datasheet system
|
Maxim
|
| MAX2374EBT MAX2374 |
SiGe, Variable IIP3, Low-Noise Amplifier in UCSP Package
From old datasheet system
|
MAXIM - Dallas Semiconductor
MAXIM[Maxim Integrated Products]
|
| SGA-8343 |
Low Noise/ High Gain SiGe HBT
Low Noise, High Gain SiGe HBT 低噪声，高增益SiGe HBT
|
Ironwood Electronics
ETC[ETC]
List of Unclassifed Manufacturers
|
| UPC1658G UPC1658G-E1 |
RF/MICROWAVE WIDE BAND LOW POWER AMPLIFIER
Low Noise, High Frequncy Si MMIC Amplifier(低噪声高频率放大
LOW NOISE/ HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE, HIGH FREQUENCY Si MMIC AMPLIFIER
LOW NOISE HIGH FREQUENCY Si MMIC AMPLIFIER
|
NEC Corp.
NEC[NEC]
|
| GS8170LW36C-250 GS8170LW72C-200 GS8170LW72C-300 GS |
Low-Noise Operational Amplifier 8-SOIC -40 to 85
18Mb sigma 1x1Lp CMOS I/O Late Write SigmaRAM
Low-Noise Operational Amplifier 8-PDIP -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
Low-Noise Operational Amplifier 8-SO -40 to 85 35.7西格x1Lp的CMOS的I / O后写入SigmaRAM
|
Electronic Theatre Controls, Inc.
|
| NESG240033 NESG240033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
| NESG210833 NESG210833-A NESG210833-T1B NESG210833- |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
NEC
|
| NESG220033 NESG220033-T1B |
NPN SiGe RF TRANSISTOR FOR UHF-BAND, LOW NOISE, LOW DISTORTION AMPLIFICATION 3-PIN MINIMOLD (33 PKG)
|
Renesas Electronics Corporation
|
